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FDZ1905PZ - P-Channel MOSFET

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.

Key Features

  • Max rS1S2(on) = 126mΩ at VGS =.
  • 4.5V, IS1S2 =.
  • 1A.
  • Max rS1S2(on) = 141mΩ at VGS =.
  • 2.5V, IS1S2 =.
  • 1A.
  • Max rS1S2(on) = 198mΩ at VGS =.
  • 1.8V, IS1S2 =.
  • 1A.
  • Max rS1S2(on) = 303mΩ at VGS =.
  • 1.5V, IS1S2 =.
  • 1A.
  • Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA.
  • Ultra-thin package: less than 0.65 mm height when mounted to PCB.
  • High power and current hand.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET www.DataSheet4U.com July 2008 FDZ1905PZ Common Drain P-Channel 1.5V –20V, –3A, 123mΩ Features „ Max rS1S2(on) = 126mΩ at VGS = –4.5V, IS1S2 = –1A „ Max rS1S2(on) = 141mΩ at VGS = –2.5V, IS1S2 = –1A „ Max rS1S2(on) = 198mΩ at VGS = –1.8V, IS1S2 = –1A „ Max rS1S2(on) = 303mΩ at VGS = –1.5V, IS1S2 = –1A „ Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.